Method of producing a quasi-flat semiconductor device capable of

Details Method of producing a quasi-flat semiconductor device capable of Method of producing a quasi-flat semiconductor device capable of

1990-01-17

1991-08-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG72, 148FIG95, 148 334, 372 50, 437 54, 437133, 437987, H01L 2120, H01L 21203

Patent

active

050396277

ABSTRACT:
A method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the device thus produced.
On the basis of a double heterostructure stack supported by a substrate comprising steps, following levelling of the stack and diffusion through a flat surface, a semiconductor device is obtained which is capable of a multi-wavelength laser effect, of which the different junctions are situated in a plane parallel with the base of the substrate.

REFERENCES:
patent: 4547956 (1985-10-01), Bouadma et al.
patent: 4720468 (1988-01-01), Menigaux et al.
patent: 4925811 (1990-05-01), Menigaux et al.

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