Etching a substrate: processes – Forming or treating optical article
Reexamination Certificate
2011-05-03
2011-05-03
Ahmed, Shamim (Department: 1713)
Etching a substrate: processes
Forming or treating optical article
C216S056000
Reexamination Certificate
active
07935263
ABSTRACT:
The invention relates to a method of producing a porous semiconductor film and the film resulting from such production. It furthermore relates to an electronic device incorporating such film and to potential uses of such film.
REFERENCES:
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 6756289 (2004-06-01), Nakagawa et al.
patent: 2001/0041423 (2001-11-01), Nishida et al.
patent: 2004/0002280 (2004-01-01), Abe et al.
patent: 2004/0226602 (2004-11-01), Durr et al.
patent: 2006/0003156 (2006-01-01), Masutani et al.
patent: 2006/0127665 (2006-06-01), Masutani et al.
patent: 1 091 440 (2001-04-01), None
patent: 1 225 034 (2002-07-01), None
patent: 1225034 (2002-07-01), None
patent: WO 99/63599 (1999-12-01), None
Wang et al, Journal of Crystal Growth, 2002, vol. 236, pp. 627-634.
Petrella et al, Thin Solid Films, 2004, vol. 451-452, pp. 64-68.
U.S. Appl. No. 11/578,843, filed Oct. 19, 2006, Duerr, et al.
U.S. Appl. No. 10/570,206, filed Dec. 4, 2006, Durr, et al.
U.S. Appl. No. 10/567,929, filed Nov. 9, 2006, Duerr, et al.
U.S. Appl. No. 11/963,090, filed Dec. 21, 2007, Duerr, et al.
U.S. Appl. No. 12/518,705, filed Jun. 11, 2009, Duerr, et al.
Duerr Michael
Nelles Gabriele
Schmid Andreas
Yasuda Akio
Ahmed Shamim
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Sony Deutschland GmbH
LandOfFree
Method of producing a porous semiconductor film on a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing a porous semiconductor film on a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing a porous semiconductor film on a substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2662999