Method of producing a polycrystalline semiconductor film without

Details Method of producing a polycrystalline semiconductor film without Method of producing a polycrystalline semiconductor film without

1993-11-24

1995-04-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 46, 437933, 437937, H01L 21266

Patent

active

054037565

ABSTRACT:
A method for producing a polycrystalline semiconductor film is disclosed. The method includes the steps of: forming a semiconductor film on a substrate; forming a passivation film on the semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of the at least one element; and implanting the hydrogen ions into the semiconductor film through the passivation film and simultaneously implanting the ions of the at least one element into the semiconductor film through the passivation film, thereby changing the semiconductor film into a polycrystalline semiconductor film having the at least one element.

REFERENCES:
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patent: 5141885 (1992-08-01), Yoshida et al.
patent: 5306651 (1994-04-01), Masumo et al.
Yoshida et al., "Fabrication of a-Si:H thin film transistors on 4-inch glass substrates by a large area ion doping technique" Japanese Journal of Applied Physics (1991) 30(1A):L67-L69.
Hajime, Patent Abstracts of Japan (12 Apr. 1988) vol. 12, No. 115, (E-599) p. 1/1, JP 62-245674.
Hirano et al., "Fabrication of polycrystalline silicon thin-film transistors by ion shower doping technique" Electronics and Communications in Japan, Part II: Electronics (1988) 71(10):40-45.

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