Method of producing a platinum-metal pattern or structure by a l

Semiconductor device manufacturing: process – Forming schottky junction – Compound semiconductor

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438675, 438574, 438579, H01L 2128

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06051485&

ABSTRACT:
A method of producing a platinum-metal structure or pattern on a substrate, which includes the steps of applying a silicon oxide layer to the substrate; applying a mask to the silicon oxide layer which is formed with an opening at a location thereof at which the platinum-metal structure or pattern is to be produced; etching the silicon oxide layer so that the substrate surface area exposed by the opening formed in the mask is larger than the opening in the mask; applying a platinum-metal layer to the mask and the exposed substrate surface area; and removing the silicon oxide layer in an etching process, so that the platinum metal present on the mask is removed simultaneously therewith, and the platinum metal present on the substrate surface forms the platinum-metal pattern or structure.

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patent: 5240878 (1993-08-01), Fitzsimmons et al.
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patent: 5705432 (1998-01-01), Lee et al.

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