Semiconductor device manufacturing: process – Forming schottky junction – Compound semiconductor
Patent
1998-04-24
2000-04-18
Bowers, Charles
Semiconductor device manufacturing: process
Forming schottky junction
Compound semiconductor
438675, 438574, 438579, H01L 2128
Patent
active
06051485&
ABSTRACT:
A method of producing a platinum-metal structure or pattern on a substrate, which includes the steps of applying a silicon oxide layer to the substrate; applying a mask to the silicon oxide layer which is formed with an opening at a location thereof at which the platinum-metal structure or pattern is to be produced; etching the silicon oxide layer so that the substrate surface area exposed by the opening formed in the mask is larger than the opening in the mask; applying a platinum-metal layer to the mask and the exposed substrate surface area; and removing the silicon oxide layer in an etching process, so that the platinum metal present on the mask is removed simultaneously therewith, and the platinum metal present on the substrate surface forms the platinum-metal pattern or structure.
REFERENCES:
patent: 4283483 (1981-08-01), Coane
patent: 4428796 (1984-01-01), Milgram
patent: 4489101 (1984-12-01), Shibata
patent: 4497684 (1985-02-01), Sebesta
patent: 4980316 (1990-12-01), Huebner
patent: 5053348 (1991-10-01), Mishra et al.
patent: 5130764 (1992-07-01), Cetronio et al.
patent: 5155053 (1992-10-01), Atkinson
patent: 5240878 (1993-08-01), Fitzsimmons et al.
patent: 5554488 (1996-09-01), Rioux
patent: 5705432 (1998-01-01), Lee et al.
Hartner Walter
Pitzer Dana
Schindler Gunther
Bowers Charles
Greenberg Laurence A.
Lerner Herbert L.
Nguyen Thanh
Siemens Aktiengesellschaft
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