Method of producing a piezoelectric element

Details Method of producing a piezoelectric element Method of producing a piezoelectric element

2006-01-24

2006-01-24

Kim, Paul D (Department: 3729)

Metal working

Piezoelectric device making

C029S594000, C029S597000, C029S602100, C029S609100, C310S31300R, C310S31300R, C310S358000, C333S187000, C333S188000, C333S189000, C333S190000, C333S191000, C427S100000, C427S226000, C427S229000

Reexamination Certificate

active

06988300

ABSTRACT:
A piezoelectric element contains a piezoelectric ceramic body having a layered perovskite structure, and has the C axis selected and oriented in the thickness direction. In the piezoelectric ceramic body, line shaped electrodes are formed perpendicular to the C axis selected and oriented. The electrodes exposed at both of the end faces of the piezoelectric ceramic body are covered with conductive materials and insulation materials. The piezoelectric ceramic body is polarized in the opposite directions on both of the sides of electrodes arranged in the width direction. Moreover, external electrodes are formed on the faces where the conductive materials and the insulation materials are formed, whereby two groups of the electrodes are arranged in an interdigital electrode form.

REFERENCES:
patent: 3590287 (1971-06-01), Berlincourt et al.
patent: 4087716 (1978-05-01), Heywang
patent: 4443729 (1984-04-01), Rider
patent: 4564782 (1986-01-01), Ogawa
patent: 4649313 (1987-03-01), Ogawa et al.
patent: 4755493 (1988-07-01), Takeuchi et al.
patent: 4900970 (1990-02-01), Ando et al.
patent: 5315205 (1994-05-01), Ohno et al.
patent: 5614044 (1997-03-01), Nagayama et al.
patent: 5912600 (1999-06-01), Unami
patent: 5914068 (1999-06-01), Hiratani et al.
patent: 56-58308 (1981-05-01), None
patent: 63236797 (1988-10-01), None
patent: 03-94487 (1991-04-01), None
patent: 5-129675 (1993-05-01), None
patent: 1999-36534 (1999-05-01), None
“PZT thin film pressure sensor for on-line monitoring injection molding”; Luo, R.C.; Chien Ming Chen; Industrial Electronics Society, 2000. IECON 2000. 26th Annual Confjerence of the IEEE , vol.: 4 , Oct. 22-28, 2000; pp.: 2394-2399.
Copy of The People's Republic of China Office Action dated Aug. 13, 2004 (and English translation of same).
Eastman et al., “Power Limits of Polarization-Induced AIGaN/GaN HEMT's”, IEEE Proceedings 2000, Cornell Conference on High Performance Devices, pp. 242-246 (Aug. 2000).
Abstract of Japanese Publication No. 03094487 A.

Affiliated with

Also associated with

Rating

Method of producing a piezoelectric element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing a piezoelectric element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing a piezoelectric element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3560525