Method of producing a photovoltaic device

Details Method of producing a photovoltaic device Method of producing a photovoltaic device

1996-09-24

1998-10-20

Nguyen, Nam

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 96, 438 97, 427 74, 136256, 136258, H01L 310216

Patent

active

058245669

ABSTRACT:
A method for producing a photo voltaic device, wherein the device comprises a base member including a substrate. A reflecting layer and a reflection enhancing layer are formed on the base member. A p-i-n structure formed of n-type, i-type and p-type semiconductor layers containing silicon atoms having a non-single crystal structure, is also formed on the base member at least once. The method comprises the steps of (a) depositing a material constituting the reflecting layer, at a substrate temperature of from 200.degree. to 500.degree. C. to form the reflecting layer; (b) thereafter lowering the substrate temperature to 100.degree. C. or below; and (c) thereafter depositing a material constituting the reflection enhancing layer on the reflecting layer at a substrate temperature of from 200.degree. to 400.degree. C., to form the reflection enhancing layer.

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