Method of producing a monolithically integrated millimeter wave

Details Method of producing a monolithically integrated millimeter wave Method of producing a monolithically integrated millimeter wave

1994-03-30

1995-04-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 60, 437126, 437133, 437176, H01L 2170

Patent

active

054057973

ABSTRACT:
A method and an arrangement for an integrated millimeter wave circuit wherein a Schottky diode and an HFET are produced in a quasi-planar arrangement from a semiconductor layer sequence. Due to the quasi-planar arrangement, the manufacturing process is simplified since particularly the contact regions of the Schottky diode and the HFET are produced simultaneously.

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IEEE Transactions on Microwave Theory and Techniques, (1991) "RF Performance of a Novel Planar Millimeter-Wave Diode Incorporating an Etched Surface Channel", vol. 39, No. 1.
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