Method of producing a microwave InP/SiO.sub.2 insulated gate fie

Details Method of producing a microwave InP/SiO.sub.2 insulated gate fie Method of producing a microwave InP/SiO.sub.2 insulated gate fie

1979-05-21

1981-02-24

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 148171, 148173, 148174, 357 23, 357 58, 357 61, 427 87, 427 93, 427 95, H01L 21208, H01L 2131

Patent

active

042525802

ABSTRACT:
An InP/SiO.sub.2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dioxide insulating film on the conducting InP film to form the gate insulator.

REFERENCES:
patent: 3472689 (1969-10-01), Scott
patent: 3607378 (1971-09-01), Ruggiero
patent: 3700978 (1972-10-01), North et al.
patent: 3821777 (1974-06-01), James
patent: 3856588 (1974-12-01), Hashimoto et al.
DeWitt; D., "Field Effect Transistor", IBM Tech. Discl. Bull., vol. 9, No. 1, Jun. 1966, p. 102.
Antypas et al., "Growth and Characterization of InP . . .", J. Electrochem. Sol., vol. 120, No. 11, Nov. 1973, pp. 1574-1577.
Barrera et al., "InP Schottky-Gate Field-Effect Transistors", IEEE Trans. on Electron Device, vol. ED-22, No. 11, Nov. 1975, pp. 1023-1030.
Fukuta et al., "Power GaAs Mesfet . . . Breakdown Voltage", IEEE Trans. on Microwave Theory & Tech., vol. MTT-24, No. 6, Jun. 1976, pp. 312-317.

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