Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-01-08
2008-01-08
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S003000, C257S774000, C257SE45002
Reexamination Certificate
active
07317201
ABSTRACT:
In a method for producing a microelectronic electrode structure a first wiring plane is prepared, an insulating region on the first wiring plane is provided, a through-hole in the insulating region is formed, a ring electrode in the through-hole is formed, and a second wiring plane is formed on the insulating region. The ring electrode comprises a first side and a second side, the ring electrode is electrically connected on the first side to the first wiring plane, and the second wiring plane is electrically connected to the second side of the ring electrode.
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German Office Action dated Aug. 29, 2005.
Gutsche Martin
Seidl Harald
Ho Tu-Tu
Infineon - Technologies AG
Jenkins Wilson Taylor & Hunt, P.A.
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