Method of producing a microelectronic electrode structure,...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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C257S002000, C257S003000, C257S774000, C257SE45002

Reexamination Certificate

active

07317201

ABSTRACT:
In a method for producing a microelectronic electrode structure a first wiring plane is prepared, an insulating region on the first wiring plane is provided, a through-hole in the insulating region is formed, a ring electrode in the through-hole is formed, and a second wiring plane is formed on the insulating region. The ring electrode comprises a first side and a second side, the ring electrode is electrically connected on the first side to the first wiring plane, and the second wiring plane is electrically connected to the second side of the ring electrode.

REFERENCES:
patent: 6348733 (2002-02-01), Lin
patent: 2003/0116794 (2003-06-01), Lowrey
patent: 2004/0113232 (2004-06-01), Johnson et al.
patent: 10339061 (2004-07-01), None
patent: 1318552 (2003-06-01), None
patent: 1469532 (2004-10-01), None
patent: 1475840 (2004-11-01), None
patent: 1480273 (2004-11-01), None
patent: 1505656 (2005-02-01), None
patent: WO 03/021693 (2003-03-01), None
German Office Action dated Aug. 29, 2005.

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