Method of producing a metal-semiconductor field-effect transisto

Details Method of producing a metal-semiconductor field-effect transisto Method of producing a metal-semiconductor field-effect transisto

1978-12-04

1981-07-14

Dean, R.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 357 15, 357 42, 357 91, 148 15, 148187, 427 84, B01J 1700, H01L 21265

Patent

active

042778824

ABSTRACT:
A metal-semiconductor field-effect transistor is formed by providing a blanket layer of the same conductivity type as the semiconductor body, with field oxide subsequently being grown, and with a region of opposite conductivity type being formed to extend partially under the field oxide, the initial blanket layer acting as the field implant region of the field-effect transistor.

REFERENCES:
patent: 3912546 (1975-10-01), Hunsperger
patent: 3921283 (1975-11-01), Shappir
patent: 4013483 (1977-03-01), Nuzillat
patent: 4122481 (1978-10-01), Horie
patent: 4160987 (1979-07-01), Dennard

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