Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2004-08-09
2008-08-26
Tran, Binh X (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S702000, C438S745000, C216S052000, C216S099000
Reexamination Certificate
active
07416984
ABSTRACT:
A method of producing a MEMS device removes the bottom side of a device wafer after its movable structure is formed. To that end, the method provides the device wafer, which has an initial bottom side. Next, the method forms the movable structure on the device wafer, and then removes substantially the entire initial bottom side of the device wafer. Removal of the entire initial bottom side effectively forms a final bottom side.
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Karpman Maurice S.
Lacsamana Elmer S.
Martin John R.
Mena Manolo G.
Analog Devices Inc.
Bromberg & Sunstein LLP
Tran Binh X
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