Method of producing a light-emitting diode comprising a...

Details Method of producing a light-emitting diode comprising a... Method of producing a light-emitting diode comprising a...

2006-02-23

2010-06-15

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S029000, C257SE33001, C977S774000, C977S932000

Reexamination Certificate

active

07736919

ABSTRACT:
A nanostructured pn junction light-emitting diode is fabricated from a semi-conducting substrate doped by a first dopant and covered by a dielectric thin layer. An amorphous thin film formed by a semi-conducting material doped by a second dopant of opposite type to that of the first dopant is then deposited on the surface of the dielectric thin layer. The assembly then undergoes a thermal treatment designed to form, in the dielectric thin layer and from the amorphous thin film, a plurality of dots of nanometric size and made of semi-conducting material doped by the second dopant. The dots are designed to be in epitaxial relationship with the substrate to form a plurality of pn junctions of nanometric size. An additional thin layer is then formed by epitaxial growth from the dots.

REFERENCES:
patent: 6157047 (2000-12-01), Fujita et al.
patent: 2003/0102444 (2003-06-01), Deppert et al.
patent: 2004/0041144 (2004-03-01), Shim et al.
patent: 2005/0006636 (2005-01-01), Shim et al.
Chen, et al.; (Mar. 2004); “Stimulated emission in a nanostructured silicon pn junction diode using current injection”; Applied Physics Letters; vol. 84; No. 12; pp. 2163-2165.
Derivaz, et al.; (Apr. 2004); “Grazing incidence x-ray diffraction and atomic force microscopy investigations of geranium dots grown on silicon (001) by successive depositions of geranium through a thin silicon oxide layer”; Applied Physics Letters; vol. 84; No. 17; pp. 3295-3297.

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