Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-12-13
2005-12-13
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S795000
Reexamination Certificate
active
06974758
ABSTRACT:
A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, is exposed to electromagnetic radiation through one of the two layers of material. The electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interface.
REFERENCES:
patent: 3808550 (1974-04-01), Ashkin
patent: 4448636 (1984-05-01), Baber
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4883561 (1989-11-01), Gmitter et al.
patent: 5465009 (1995-11-01), Drabik et al.
patent: 5559043 (1996-09-01), Bruel
patent: 5985687 (1999-11-01), Bowers et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6159824 (2000-12-01), Henley et al.
patent: 35 08 469 (1986-09-01), None
patent: 0 718 885 (1996-06-01), None
patent: 0 987 741 (2000-03-01), None
M.K. Kelly et al.: “Optical Patterning of GaN films”, Appl. Physics, Letter 69 (12), Sep. 16, 1996, pp. 1749-1751.
Eli Yablonovitch et al.: “Extreme Selectivity in the Lift-Off of Epitaxial GaAs films”, Appl. Physics Letter 51 (26), Dec. 28, 1987, pp. 2222-2224.
R. Groh et al.: “On the Thermal Decomposition of GaN in Vacuum”, pp. 353-357.
Yasua Morimoto: “Few Characteristics of Epitaxial GaN-Etching and Thermal Decomposition”, J. Electrochemical Society: Solid State Science and Technology, Oct. 1974, pp. 1383-1384.
R.T. Leonard et al.: “Photoassisted Dry Etching of GaN”, Appl. Physics , Letter 68, Feb. 5, 1996, pp. 794-796.
Young-Feng Lu et al.: “Laser-Induced Dry Lift-Off Process”, Jpn. J. Appl. Physics, vol. 34, 1995, pp. 1669-1670.
Young-Feng Lu et al.: “Excimer-Laser Removal of SiO2Patterns from GaAs Substrates”, Jpn. Appl. Physics, vol. 33, 1994, pp. 324-327.
C.R. Miskys et al.: “MOCVD-Epitaxy on Free-Standing HVPE-GaN Substrates”, Phys. Stat. Sol. (a) 176, 443 (1999), pp. 443-446.
L. Tsakalakos et al.: “Epitaxial Ferroelectric (Pb, La)(Zr, Ti)O3Thin Films on Stainless Steel By Excimer Laser Liftoff”, Applied Physics Letters, vol. 76, No. 2, Jan. 10, 2000, pp. 227-229.
Ambacher Oliver
Brandt Martin
Dimitrov Roman
Handschuh Robert
Kelly Michael
Coleman W. David
Greenberg Laurence A.
Locher Ralph E.
Siemens Aktiengesellschaft
Stemer Werner H.
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