Method of producing a laser device

Details Method of producing a laser device Method of producing a laser device

1994-03-14

1996-05-07

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 90, 437129, H01L 2120

Patent

active

055146198

ABSTRACT:
A semiconductor microstructure is formed by forming a groove having a surface of a side wall and a surface of a bottom, and depositing a semiconductor layer in the groove so that a width of the semiconductor layer is defined by the surface of the side wall.

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Hitomaro Tougou et al; "Molecular Beam Epitaxial Regrowth On AlGaAs/GaAs Wire Structure"; Proceedings Of The International Symposium On Intelligent Design And Synthesis Of Electronic Material Systems; Osaka, Japan; Nov. 4-6, 1992; pp. 177-178.

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