Fishing – trapping – and vermin destroying
Patent
1992-05-28
1993-08-10
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 27, 437 30, 437 52, 148DIG109, H01L 21265
Patent
active
052348539
ABSTRACT:
A high voltage MOS transistor includes a semiconductor substrate (1) of a first semiconductor type, a gate electrode (14) formed on the semiconductor substrate via a gate oxide layer (13), first and second diffusion regions (15, 16) formed in the semiconductor substrate on both sides of the gate electrode and being of a second semiconductor type opposite to the first semiconductor type, and an electrode (38) which is directly connected to the first diffusion region (15) and is made up of a conductor layer (49) including polysilicon. An impurity concentration of the conductor layer (49) including the polysilicon is higher than an impurity concentration of the first diffusion region (15).
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Fujitsu Limited
Hearn Brian E.
Trinh Michael
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