Method of producing a gate turn-off thyristor

Details Method of producing a gate turn-off thyristor Method of producing a gate turn-off thyristor

1985-04-22

1987-05-05

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, 148187, 357 38, H01L 21385

Patent

active

046629572

ABSTRACT:
A method of producing a gate turn-off thyristor includes producing a first n type impurity region, a second p type impurity region, a third n type impurity region, and a fourth p type impurity region produced in a semiconductor substrate providing a cathode electrode in contact with the first n type impurity region, providing a gate electrode in contact with the second p type impurity region, and an anode electrode which short-circuits the third and the fourth regions at the second main surface of the semiconductor substrate. Gold is diffused into the third region at a predetermined diffusion temperature thereby shortening the life time of carriers in the substrate.

REFERENCES:
patent: 3303360 (1967-02-01), Gentry
patent: 3342651 (1967-09-01), Raithel
patent: 3356543 (1967-12-01), Desmond et al.
patent: 3442722 (1969-05-01), Bauerlein et al.
patent: 3860947 (1975-01-01), Gamo et al.
patent: 3941625 (1976-03-01), Kennedy et al.
patent: 4450467 (1984-05-01), Nagano et al.
patent: 4574296 (1986-03-01), Sueoka et al.

Affiliated with

Also associated with

Rating

Method of producing a gate turn-off thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing a gate turn-off thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing a gate turn-off thyristor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2397392