Method of producing a field effect transistor

Details Method of producing a field effect transistor Method of producing a field effect transistor

1994-04-08

1995-07-18

Heran, Brian E.

Fishing, trapping, and vermin destroying

437227, 437902, 437912, 437974, 148DIG28, H01L 218252

Patent

active

054340942

ABSTRACT:
FET devices according to the invention are made by etching separation grooves and the via-holes from the front surface of the substrate. Thereafter, the thickness of the substrate is reduced from the rear surface to expose the plating in the via-holes and separation grooves. A rear surface electrode and a plated heat sink are sequentially deposited on the rear surface of the thinned substrate. The devices are divided from a wafer by etching and/or severing along the separation grooves and at opposed locations along the plated heat sink.

REFERENCES:
patent: 3383760 (1968-05-01), Shwartzman
patent: 3895429 (1975-07-01), Huang et al.
patent: 3938176 (1976-02-01), Sloan, Jr.
patent: 3986196 (1976-10-01), Decker et al.
patent: 4023260 (1977-05-01), Schneider
patent: 4180422 (1979-12-01), Rosvold
patent: 4219827 (1980-08-01), Kaiser
patent: 4219835 (1980-08-01), Van Loon et al.
patent: 4237600 (1980-12-01), Rosen et al.
patent: 4255212 (1981-03-01), Chappell et al.
patent: 4384400 (1983-05-01), Rosen et al.
patent: 4486767 (1984-12-01), Fraleux et al.
patent: 4532699 (1985-08-01), Bourdillot et al.
patent: 4537654 (1985-08-01), Berenz et al.
patent: 5338967 (1994-08-01), Kosaki
Saito et al, "X and Ku Band High Efficiency Power GaAs FETs", IEEE MTT-S Digest, pp. 265-267, 1983.
Goel et al, "An 8.0 Watt K-Band FET Amplifier For Satellite Downlink", 1983 IEEE MTT-S Digest, pp. 273-275.
D'Asaro et al, "Plasma-Etched Via Connections to GaAs FET's", The Institute of Physics Conference, 1980, pp. 267-273.

Affiliated with

Also associated with

Rating

Method of producing a field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing a field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing a field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2418901