Method of producing a dynamic random access memory device

Details Method of producing a dynamic random access memory device Method of producing a dynamic random access memory device

1989-07-05

1991-12-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 60, 437195, 437233, 437235, 437919, H01L 2170

Patent

active

050717839

ABSTRACT:
A dynamic random access memory device includes a storage capacitor having a plurality of stacked conductive films which form a storage electrode. A gap is formed between elevationally adjacent conductive films so as to surround the storage electrode. A gap is also formed between an insulating film which covers a gate electrode for insulation and a lowermost film of the storage electrode. Connection between the adjacent films may be established so that an uppermost film elevationally extends so as to make contact with a drain region. Also, connection can be established so that an upper film is mounted directly on a lower film. An end portion of the film may be thicker than the other portion thereof. The stacked film structure may be produced by alternatively forming a film made of a material different from the insulating film covering the gate electrode, and a conductive film.

REFERENCES:
patent: 4475118 (1984-10-01), Klein et al.
Watanabe et al., "Stacked Capacitor Cells for High-Density Dynamic RAMs", IEDM 88, pp. 600-603.

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