Method of producing a doped zone of one conductivity type in a s

Details Method of producing a doped zone of one conductivity type in a s Method of producing a doped zone of one conductivity type in a s

1975-10-09

1977-12-20

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29578, 148174, 148188, 357 59, 357 91, H01L 21265, H01L 21225

Patent

active

040639673

ABSTRACT:
A semiconductor body is coated at selected areas thereof with a polycrystalline or amorphous semiconductor layer, a dopant is ion-implanted into such polycrystalline or amorphous layer and the resultant structure is then subjected to diffusion conditions to diffuse the dopant from the polycrystalline or amorphous layer into the select zone of the semiconductor body. This process causes very slight disturbances in the crystal lattice of the semiconductor body and provides an adjustable dopant concentration at select surface zones of the semiconductor body.

REFERENCES:
patent: 3460007 (1969-08-01), Scott
patent: 3548233 (1970-12-01), Cave et al.
patent: 3558374 (1971-01-01), Boss et al.
patent: 3607449 (1971-09-01), Tokuyama et al.
patent: 3664896 (1972-05-01), Duncan
patent: 3717507 (1973-02-01), Abe
patent: 3764413 (1973-10-01), Kakizaki et al.
patent: 3775191 (1973-11-01), McQuhae
patent: 3928095 (1975-12-01), Harigaya et al.

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