Method of producing a doped zone of a given conductivity type in

Details Method of producing a doped zone of a given conductivity type in Method of producing a doped zone of a given conductivity type in

1975-06-18

1977-06-14

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, H01L 21223

Patent

active

040295273

ABSTRACT:
The "emitter-dip effect" is eliminated by applying a layer of an undoped polycrystalline semiconductor onto the surface of a select zone to be doped in a semiconductor body, for example, such as on the emitter zone of a silicon body and then diffusing a select dopant through the undoped polycrystalline semiconductor layer into the select zone of the semiconductor body.

REFERENCES:
patent: 3621346 (1971-11-01), Chang et al.
patent: 3703420 (1972-11-01), Vora
patent: 3719535 (1973-03-01), Zoroglu
patent: 3897282 (1975-07-01), White

Affiliated with

Also associated with

Rating

Method of producing a doped zone of a given conductivity type in does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing a doped zone of a given conductivity type in, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing a doped zone of a given conductivity type in will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-8362