Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-10-16
2007-10-16
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S737000, C438S738000, C257SE21220, C257SE21232
Reexamination Certificate
active
11296853
ABSTRACT:
In an embodiment, a method of producing a diffraction grating comprises steps of: forming, on a man surface of a first member, a first mask having a plurality of resist patterns arranged at a Bragg diffraction period; etching the first member by use of the first mask, thereby providing the first member with a diffraction grating; removing the first mask; forming, on the diffraction grating, a second member of which an etching rate is lower than that of the first member; forming a second mask on a first region in a surface of the second member, the first region and a second region in the surface being adjacent to each other; and etching the first member and the second member by use of the second mask.
REFERENCES:
patent: 5221429 (1993-06-01), Makuta
patent: 5872022 (1999-02-01), Motoda et al.
patent: 0439324 (1991-07-01), None
patent: 61138202 (1986-06-01), None
patent: 05-142406 (1993-06-01), None
patent: 06148413 (1994-05-01), None
patent: 08029605 (1996-02-01), None
patent: 10303175 (1998-11-01), None
Dang Trung
Smith , Gambrell & Russell, LLP
Sumitomo Electric Industries Ltd.
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