Method of producing a dielectric with perowskite structure and c

Compositions: coating or plastic – Coating or plastic compositions – Marking

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

106 733, 106 7331, H01B 312

Patent

active

042448301

ABSTRACT:
Adding compounds which form in the temperature range of 1000.degree. to 1250.degree. C. the eutectics CuO.Cu.sub.2 O or CuO.Cu.sub.2 O Me.sup.IV O.sub.2 to materials having a perowskite structure results in a reduction of the sintering temperature of the perowskite ceramic to between 1050.degree. and 1185.degree. C. For the perowskite ceramic the relevant materials are alkaline earth titanates, -zirconates, -stannates and mixed crystals thereof; Me.sup.IV O.sub.2 represents the oxides of the elements of group IV of the periodic system of elements.

REFERENCES:
patent: 3441517 (1969-04-01), Braver et al.
patent: 3473958 (1969-10-01), Waku
patent: 3490887 (1970-01-01), Herczog et al.
patent: 3851228 (1974-11-01), Sheard
patent: 3977887 (1976-08-01), McIntosh

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of producing a dielectric with perowskite structure and c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing a dielectric with perowskite structure and c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing a dielectric with perowskite structure and c will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2230424

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.