Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-01-20
2008-07-08
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S052000, C438S456000
Reexamination Certificate
active
07396740
ABSTRACT:
A method of producing a device with a movable portion spaced apart from a support wafer comprises a step of providing the support wafer having a structured surface and a further step of providing a device wafer with a backing layer and a device layer disposed thereon. Further, the method comprises the step of generating a first planarization layer from a first starting material on the support wafer with a first method to fill in the structures of the structured surface of the support wafer, whereby a surface with a first degree of planarization is obtained. Further, the method comprises a step of generating a second planarization layer from a second starting material on the planarized surface of the support wafer with a second method to obtain a surface with a second degree of planarization, which is higher than the first degree of planarization, wherein the first and second planarization layers can be removed together. Additionally, the support wafer is connected to the device wafer such that the device layer and the planarized surface of the support wafer are connected. Then, removing the backing layer of the device wafer is performed, followed by structuring the resulting structure and removing the first and second planarization layers via a common method to generate the moveable portion of the device.
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Bakke Thor
Friedrichs Martin
Haase Thomas
Völker Benjamin
Frauhofer-Gesellschaft zur Foerderung der Angewandten Forschung
Greenberg Laurence A.
Locher Ralph E.
Stemer Werner H.
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