Method of producing a contact between a metallizing layer and a

Details Method of producing a contact between a metallizing layer and a Method of producing a contact between a metallizing layer and a

1998-02-13

2000-11-07

Dutton, Brian

Semiconductor device manufacturing: process

Chemical etching

438443, H01L 21302, H01L 2176

Patent

active

061436607

ABSTRACT:
A method for producing a low-impedance contact between a metallizing layer and a semiconductor material and a method for producing a capacitor. The two methods are adapted to one another such that in the course of a single process, both contacts and capacitors can be formed. In particular, by the methods of the invention, the insulation layer, which forms when the first dopant for the contact is forced inward, can be used as a capacitance dielectric of a capacitor.

REFERENCES:
patent: 5480823 (1996-01-01), Hsu
patent: 5482888 (1996-01-01), Hsu et al.
patent: 5652454 (1997-07-01), Iwamatsu et al.
patent: 5831311 (1998-11-01), Hsu
International Application No. WO 93/02470 (Blanchard), dated Feb. 4, 1993.

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