Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Patent
1997-03-21
2000-03-07
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having moving solid-liquid-solid region
117 41, 117 43, 117 47, 117 50, C30B 1322
Patent
active
060334703
ABSTRACT:
The present invention provides a cerium-containing magnetic garnet single crystal having a size large enough to use as a material for optical communication of an isolator and for an electronic device, and a production method therefor. The cerium-containing magnetic garnet single crystal of the present invention is obtained by melting a cerium-containing magnetic garnet polycrystal while applying a sharp, large temperature gradient to the solid-liquid interface of the melt and the solid, and then solidifying the melted polycrystal. The polycrystal is preferably heated by using an optical heating device, for example, a combination of a main heating device using a laser beam, and an auxiliary heating device using reflected light from a halogen lamp.
REFERENCES:
patent: 5077271 (1991-12-01), Hiskes et al.
patent: 5434101 (1995-07-01), Yamasawa et al.
Blum, IBM Technical Diclosure Bullentin, "Vertical-Gradient Freeze Growth of Garnet Crystals", vol. 19, No. 6, Nov. 1976, pp. 2318-2319.
"Sputtered Garnet Media for Magneto--Optic Data Storage"; Shong et al; J. Magnetic Mater, 88 (1-2), (1990), pp. 205-210, (Abstract Only!).
Fujii Takashi
Okada Masakatsu
Sekijima Takenori
Wakino Kikuo
Hiteshew Felisa
Murata Manufacturing Co. Ltd.
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