Method of producing a bipolar transistor having an amorphous emi

Details Method of producing a bipolar transistor having an amorphous emi Method of producing a bipolar transistor having an amorphous emi

1991-05-21

1992-04-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437101, 437937, 148DIG1, 148DIG11, 357 2, 357 16, 357 34, H01L 2100, H01L 2102, H01L 21265

Patent

active

051089360

ABSTRACT:
A bipolar hetero-junction transistor has an emitter formed which consists of doped and hydrogenated semiconductor material which is at least partly in amorphous form. A high current gain (.beta.) is obtained due to the wide bandgap in the emitter material. Preferably, the layer forming the emitter consists of microcrystalline silicon which is doped and hydrogenated. This yields a small base resistance which is preferable for high frequency purposes. The amorphous bipolar hetero-junction transistor can be produced by a CVD-technique, by using a plasma or by photodissociation. The transistor having a microcrystalline emitter layer can be produced by one of the above methods or by heating an amorphous emitter layer.

REFERENCES:
patent: 4015282 (1977-03-01), Shaw
patent: 4062034 (1977-12-01), Matsushita et al.
patent: 4127861 (1978-11-01), Deneuville
patent: 4193821 (1980-03-01), Feng et al.
patent: 4227942 (1980-10-01), Hall
patent: 4317844 (1982-03-01), Carlson
patent: 4357179 (1982-11-01), Adams et al.
patent: 4410559 (1983-10-01), Hamakawa et al.
patent: 4446168 (1984-05-01), Kato et al.
patent: 4451538 (1984-05-01), Tanner
patent: 4578696 (1986-03-01), Ueno et al.
patent: 4593305 (1986-06-01), Kurata et al.
patent: 4604636 (1986-08-01), Dalal
Ghandhi, S., VLSI Fabrication Principles, Chaps. 7, 8, & 9, Wiley & Sons, 1983.
Sze, S., VLSI Technology, Chap. 3, McGraw-Hill, 1983.
Sze, S., VLSI Technology, Chapter 3, pp. 93-94, McGraw-Hill, 1983.
Kroemer, H., Theory of a Wide-Gap Emitter for Transistors, Proceedings of the IRE, vol. 45, No. 11, Nov. 1957, pp. 1535-1537.
Petersen, K., Fabrication and Operation of an Amorphous-Emitter Transistors, IEDM, Technical Digest, Dec. 1974, pp. 569-572.
Matsushita, T., A Silicon Heterojunction Transistor, Appl. Phys. Lett., vol. 35, No. 7, Oct. 1979, pp. 549-550.
Ghannam, M., A Silicon Bipolar Transistor with a Hydrogenated Amorphous Emitter, IEDM, Dec. 1984, pp. 746-748.
Petersen, K. E., Amorphous-Crystalline Heterojunction Transistors, IEEE Trans. on Elect. Devices, vol. ED-23, No. 4, Apr. 1976, pp. 471-477.
Carlson, D. E., Amorphous Silicon Solar Cells, IEEE Tran. on Elect. Devices, vol. Ed-24, No. 4, Apr. 1977, pp. 449-453.
Brodsky, M. H., Doping of Sputtered Amorphous Semiconductors, IBM Technical Disclosure Bulletin, vol. 19, No. 12, May 1977, pp. 4802-4803.
T. Ichimura et al.,--"a-SI:H Films by D.C. Glow Discharge", 1046B Extended Abstracts 1980, vol. 80-2, Pennington, N.J., Abstract No. 570.
G. Rajeswaran et al.,--"Substrate Temperature Dependence of Microcrystgallinity in Plasma-Deposited, Boron-Doped Hydrogenatred Silicon Alloys", Appl. Phys. Lett. 43(11) Dec. 1983, pp. 1045-1047.

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