Method of producing 3-D mold, method of producing finely...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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Details

C250S492100, C250S492220, C250S492300, C430S004000, C430S005000, C430S399000, C430S310000, C438S795000, C438S798000

Reexamination Certificate

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07629596

ABSTRACT:
To provide production methods for a 3-D mold, a finely processed product, and a fine pattern molded product in which the depth and the line width can be formed with high precision, a 3-D mold, a finely processed product, a fine-pattern molded product, and an optical element formed with high precision.A method of producing a 3-D mold that is configured to control depth within 10 nm and form a line width of 200 nm or less, wherein an irradiation step, which irradiates an electron beam to a resist layer of an object of processing that has the resist layer constituted with a polysiloxane-based material on or above a substrate, includes a step having irradiation conditions such that the acceleration voltage is from 1 kV to 3 kV without generation of the backscattering and the dosage is 400 μC/cm2, a method of producing finely processed product using the 3-D mold, a method of producing fine-pattern molded product using the 3-D mold or the finely processed product, and the 3-D mold, the finely processed product, the fine-pattern molded product, and an optical element formed with high precision with these production methods.

REFERENCES:
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Chou, S.Y., et al. Imprint of Sub-25 nm vias and Trenches in Polymers, Applied Physics Letters 67, pp. 3114-3116 (1995).
Taniguchi, J., et al. “3D imprint technology using substrate voltage change”, Applied Surface Science, Elsevier, Amsterdam, NL, vol. 238, No. 1-4, Nov. 15, 2004, pp. 324-330.
EPO Communication dated Oct. 9, 2008, including Supplementary Search Report.

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