Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-02-21
2009-12-08
Vanore, David A (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492220, C250S492300, C430S004000, C430S005000, C430S399000, C430S310000, C438S795000, C438S798000
Reexamination Certificate
active
07629596
ABSTRACT:
To provide production methods for a 3-D mold, a finely processed product, and a fine pattern molded product in which the depth and the line width can be formed with high precision, a 3-D mold, a finely processed product, a fine-pattern molded product, and an optical element formed with high precision.A method of producing a 3-D mold that is configured to control depth within 10 nm and form a line width of 200 nm or less, wherein an irradiation step, which irradiates an electron beam to a resist layer of an object of processing that has the resist layer constituted with a polysiloxane-based material on or above a substrate, includes a step having irradiation conditions such that the acceleration voltage is from 1 kV to 3 kV without generation of the backscattering and the dosage is 400 μC/cm2, a method of producing finely processed product using the 3-D mold, a method of producing fine-pattern molded product using the 3-D mold or the finely processed product, and the 3-D mold, the finely processed product, the fine-pattern molded product, and an optical element formed with high precision with these production methods.
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Deveau Todd
Maskell Michael
Thomas Kayden Horstemeyer & Risley LLP
Tokyo University of Science Educational Foundation Administrativ
Vanore David A
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