Method of processing substrates and substrate processing apparat

Details Method of processing substrates and substrate processing apparat Method of processing substrates and substrate processing apparat

1991-08-27

1994-02-15

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

C23C 1600

Patent

active

052865231

ABSTRACT:
In a CVD apparatus, an epitaxial apparatus or an etching apparatus, the processing conditions are made uniform in a batch process by changing, with time, positions which are disposed in the direction of a gas flow in a reaction vessel and at which the optimal surface processing conditions are attained. By doing so, homogeneous and uniform films can be formed with a large substrate processing apparatus.

REFERENCES:
patent: 4517220 (1985-05-01), Rose
patent: 4910042 (1990-03-01), Hokynar
J. Sato & K. Maeda, "Very Low Temperature CVD of SiO.sub.2 Films Using Ozone and Organosilane", Electrochemical Society Spring Meeting, Abstract No. 9, May 1971, pp. 31-33.

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