Method of processing semiconductor wafers

Details Method of processing semiconductor wafers Method of processing semiconductor wafers

1999-07-19

2000-09-05

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438691, H01L 21302, H01L 21461

Patent

active

06114245&

ABSTRACT:
A method of processing a semiconductor wafer comprises rough grinding the front and back surfaces of the wafer to quickly reduce the thickness of the wafer. The front and back surfaces are then lapped with a lapping slurry to further reduce the thickness of the wafer and reduce damage caused by the rough grinding. Lapping time is reduced by provision of the rough grinding step. The wafer is etched in a chemical etchant to further reduce the thickness of the wafer and the front surface of the wafer is polished using a polishing slurry to reduce the thickness of the wafer down to a predetermined final wafer thickness. A fine grinding step may be added to eliminate lapping and/or reduce polishing time.

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