Method of processing semiconductor substrate

Details Method of processing semiconductor substrate Method of processing semiconductor substrate

1997-11-06

2000-03-28

Gulakowski, Randy

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438905, 134 13, B08B 304, H01L 21302

Patent

active

060431628

ABSTRACT:
Contamination on semiconductor wafers in vapor phase etching is eliminated by performing the drying step quickly, thereby improving productivity. This method includes the steps of etching the semiconductor wafers by introducing a reactive gas into the reaction chamber, restoring the pressure in the reaction chamber to the atmospheric pressure by introducing an inert gas into the reaction chamber, cleaning the semiconductor wafers, drying the semiconductor wafers, and introducing an alcoholic gas into the reaction chamber. The inner wall of the reaction chamber is maintained constantly at a predetermined temperature in the range of from 50.degree. C. to 80.degree. C. Alcohol having a boiling point at least 10.degree. C. lower than the predetermined temperature is chosen.

REFERENCES:
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4900395 (1990-02-01), Syverson et al.
patent: 5022961 (1991-06-01), Izumi et al.
patent: 5660642 (1997-08-01), Britten

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