Semiconductor device manufacturing: process – Chemical etching
Patent
1998-08-13
2000-11-07
Hiteshew, Felisa
Semiconductor device manufacturing: process
Chemical etching
117 4, 117 94, 117106, H01L 21302
Patent
active
061436615
ABSTRACT:
A method of fabricating a semiconductor device by the use of laser crystallization steps is provided. During these crystallization steps, an amorphous or polycrystalline semiconductor is crystallized by laser irradiation in such a way that generation of ridges is suppressed. Two separate laser crystallization steps are carried out. First, a laser irradiation step is performed in a vacuum, using somewhat weak laser light. Then, another laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient with intenser laser light. The first laser irradiation conducted in a vacuum does not result in satisfactory crystallization. However, this irradiation can suppress generation of ridges. The second laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient to achieve sufficient crystallization, but no ridges are produced.
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Kousai Takamasa
Miyanaga Akiharu
Zhang Hongyong
Costellia Jeffrey L.
Hiteshew Felisa
Semiconductor Energy Laboratory Co,. Ltd.
Sharp Kabushiki Kaisha
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