Method of processing semiconductor device with laser

Details Method of processing semiconductor device with laser Method of processing semiconductor device with laser

1995-06-05

1998-08-18

Garrett, Felisa

Fishing, trapping, and vermin destroying

437173, 117 94, 117106, H01L 21306

Patent

active

057957959

ABSTRACT:
A method of fabricating a semiconductor device by the use of laser crystallization steps is provided. During these crystallization steps, an amorphous or polycrystalline semiconductor is crystallized by laser irradiation in such a way that generation of ridges is suppressed. Two separate laser crystallization steps are carried out. First, a laser irradiation step is performed in a vacuum, using somewhat weak laser light. Then, another laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient with intenser laser light. The first laser irradiation conducted in a vacuum does not result in satisfactory crystallization. However, this irradiation can suppress generation of ridges. The second laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient to achieve sufficient crystallization, but no ridges are produced.

REFERENCES:
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patent: 4942058 (1990-07-01), Sano
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5372836 (1994-12-01), Imahashi et al.
patent: 5424244 (1995-06-01), Zhang et al.

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