Method of processing semiconductive material wafers and method o

Details Method of processing semiconductive material wafers and method o Method of processing semiconductive material wafers and method o

1997-08-20

1999-01-26

Picardat, Kevin M.

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

438106, 438128, H01L 2144, H01L 2148, H01L 2150

Patent

active

058638130

ABSTRACT:
A method of processing a semiconductive material wafer includes, a) providing a semiconductive material wafer having integrated circuitry fabricated within discrete die areas on the wafer, the discrete die areas having bond pads formed therewithin; b) cutting at least partially into the semiconductive material wafer about the die areas to form a series of die cuts, the cuts having edges; c) depositing an insulative material over the wafer and to within the cuts to at least partially cover the cut edges and to at least partially fill the cuts with the insulative material; d) removing the insulative material from being received over the bond pads and leaving the insulative material within the die cuts; and e) after the removing, cutting into and through the insulative material within the die cuts and through the wafer. A semiconductor chip includes an outer surface having conductive bond pads proximately associated therewith. Side edges extend from the outer surface. An insulating material layer is adhered to at least a portion of the side edges and not formed over the bond pads. The insulative material layer can be continuous and adhered to only a portion of the outer surface and adhered to at least a portion of the side edges. The insulative material preferably has a thickness of between 100 Angstroms and 100 microns.

REFERENCES:
patent: 5169804 (1992-12-01), Schwartzbauer
patent: 5455455 (1995-10-01), Badehi
patent: 5501104 (1996-03-01), Ikeda et al.

Affiliated with

Also associated with

Rating

Method of processing semiconductive material wafers and method o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of processing semiconductive material wafers and method o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of processing semiconductive material wafers and method o will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1449996