Method of processing selected surfaces in a semiconductor...

Details Method of processing selected surfaces in a semiconductor... Method of processing selected surfaces in a semiconductor...

2005-04-19

2005-04-19

Markoff, Alexander (Department: 1746)

Cleaning and liquid contact with solids

Processes

Including work heating or contact with combustion products

C134S001000, C134S022100, C134S022180, C438S905000

Reexamination Certificate

active

06881277

ABSTRACT:
The present invention relates to a method of processing selected surfaces in a semiconductor process chamber by creating a temperature differential between the selected surfaces and contacting the surfaces with a reactant that preferentially react with a surface at one end of the temperature differential relative to the other selected surface(s). More particularly, the invention relates to the use of nitrogen trifluoride (NF3) gas for in situ cleaning of cold wall process chambers such as Rapid thermal Chemical Vaporization (“RTCVD”) systems.

REFERENCES:
patent: 6083323 (2000-07-01), Carlson et al.
patent: 6254689 (2001-07-01), Meder
patent: 6375756 (2002-04-01), Ishibashi
patent: 6395099 (2002-05-01), Pan

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