Method of processing internal surfaces of a chemical vapor depos

Details Method of processing internal surfaces of a chemical vapor depos Method of processing internal surfaces of a chemical vapor depos

1998-05-21

2000-07-04

Gulakowski, Randy

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 221, 216 37, 438905, 34493, 34479, C25F 312

Patent

active

060823755

ABSTRACT:
The invention encompasses methods of processing internal surfaces of a chemical vapor deposition reactor. In one implementation, material is deposited over internal surfaces of a chemical vapor deposition reactor while processing semiconductor substrates therein. The deposited material is treated with atomic oxygen. After the treating, at least some of the deposited material is etched from the reactor internal surfaces. In one embodiment, first etching is conducted of some of the deposited material from the reactor internal surfaces. After the first etching, remaining deposited material is treated with atomic oxygen. After the treating, second etching is conducted of at least some of the remaining deposited material from the reactor internal surfaces. In one embodiment, the deposited material is first treated with atomic oxygen. After the first treating, first etching is conducted of some of the deposited material from the reactor internal surfaces. After the first etching, second treating is conducted of remaining deposited material with atomic oxygen. After the second treating, second etching is conducted of at least some of the remaining deposited material from the reactor internal surfaces.

REFERENCES:
patent: 5176791 (1993-01-01), Itoh et al.
patent: 5283087 (1994-02-01), Yamazaki et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5417826 (1995-05-01), Blalock
patent: 5620526 (1997-04-01), Watatani et al.
patent: 5679211 (1997-10-01), Huang
patent: 5861065 (1999-01-01), Johnson
patent: 5939831 (1999-08-01), Fong et al.

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