Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-03-21
2006-03-21
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S712000, C438S715000, C250S492200, C250S492300, C156S345390
Reexamination Certificate
active
07015146
ABSTRACT:
A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plasma is generated and directed so as to contact the semiconductor only within the backside window via an opening in a focusing shield. This focused collimated ion plasma contacts the semiconductor, only within the window, while the semiconductor is simultaneously being rotated and tilted by a temperature controlled stage, for uniform removal of semiconductor layering such that the semiconductor features, in a location on the semiconductor corresponding to the backside window, are exposed. Backside unlayering of the invention may be enhanced by CAIBE processing.
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Kane Terence L.
Miles Darrell L.
Sylyestri John D.
Tenney Michael P.
Brewster William M.
Capella Steven
DeLio & Peterson LLC
Nowak Kelly M.
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