Method of processing a polysilicon film on a single-crystal sili

Details Method of processing a polysilicon film on a single-crystal sili Method of processing a polysilicon film on a single-crystal sili

1995-06-12

1997-01-14

Quach, T. N.

Fishing, trapping, and vermin destroying

437 52, 437986, 1566571, 1566431, H01L 21306, H01L 21328

Patent

active

055939066

ABSTRACT:
A method of processing a polysilicon film formed on a single-crystal silicon substrate which can remove the polysilicon film with good selectivity in a fabrication process of semiconductor devices. First, a polysilicon film having an N-portion to be removed is formed on a single-crystal silicon substrate and then, the portion is selectively removed by the reactive ion etching using a Cl.sub.2 gas or mixed gases including a Cl.sub.2 gas. Preferably, N-impurity doping into the polysilicon film is performed by P or As ion-implantation with a dose of 1.times.10.sup.15 cm.sup.-2 or more. A Cl.sub.2 gas, mixed gases of Cl.sub.2 and BCl.sub.3, mixed gases of Cl.sub.2 and HBr, mixed gases of Cl.sub.2 and BBr.sub.3, and mixed gases of Cl.sub.2 and SiCl.sub.4 are preferably used.

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