Method of processing a piezoelectric device

Adhesive bonding and miscellaneous chemical manufacture – Methods – Surface bonding and/or assembly therefor

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156153, 156155, 156281, 148DIG12, 148DIG135, 437225, 437974, H01L 2130, H01L 21304, H01L 21306

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active

056479328

ABSTRACT:
The following steps are performed when processing electronic components such as piezoelectric devices. At Step 1 inter-atom bond is created between a functional member such as a quartz crystal plate and a first substrate, and the functional member and the quartz crystal plate are directly joined together. At Step 2, the functional member and a second substrate are fixed together with an adhesive agent or by a direct bond. At Step 3, the first substrate is removed chemically or mechanically, with said functional member and said second substrate still being joined together. A step of polishing said functional member for the adjustment of thickness thereof may be done between Step 1 and Step 2. For example, a silicon dioxide thin film may be provided between the functional member and the first substrate. Since no adhesive layer exists between the functional member and the first substrate, this improves the degree of plane of the functional member when joined to the first substrate. Therefore, functional member thickness accuracy becomes extremely high and mass productivity is also improved.

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Haisma, J, et al, "Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations," Japanese Journal of Applied Physics, Aug. 1989, pp. 1426-1443.

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