Method of priming semiconductor substrate for subsequent photore

Details Method of priming semiconductor substrate for subsequent photore Method of priming semiconductor substrate for subsequent photore

1988-07-12

1991-03-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

430313, 430317, 430318, 437225, 437229, 437245, H01L 21312, H01L 2147

Patent

active

050010832

ABSTRACT:
Disclosed is a method of improving semiconductor device yield by enhancing photoresist adherence to semiconductor substrates during device fabrication. The surface of a layer, such as silicon oxide of silicon nitride, on a semiconductor substrate is coated with a thin layer of oxygen-reactive metal prior to applying photoresist material thereto. The metal is selected from the group consisting of tungsten, titanium, chromium, and combinations thereof; the thickness of the layer of oxygen-reactive metal is of the order of 50-100 .ANG.. The metal coating facilitates the adhesion of the resist material and reduces undercutting of the layer to be etched.

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