Method of preventing transfer and storage of non-optically...

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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C257S292000, C250S208100

Reexamination Certificate

active

06950134

ABSTRACT:
Disclosed is a method of storing optically generated charges by an optical signal in a solid state imaging device, which is particularly a method of storing optically generated charges by an optical signal in a solid state imaging device using a MOS image sensor of a threshold voltage modulation type, which is used for a video camera, an electronic camera, an image input camera, a scanner, a facsimile or the like. The method comprises the steps of preparing a solid state imaging device having a unit pixel including a photo diode111and a MOSFET112, the MOSFET112having a carrier pocket25for storing optically generated charges generated in the photo diode111, the carrier pocket25being provided under a channel region15cin the vicinity of a source region16, transferring the optically generated charges to the carrier pocket25and then storing them therein while maintaining the channel region15cin an accumulation state such that the optically generated charges are not affected by interface levels in the channel region15c.

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IEEE, vol. 38, No. 5, May 1991, pp. 1011-1020.

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