Method of preventing polysilicon stringers during formation of a

Details Method of preventing polysilicon stringers during formation of a Method of preventing polysilicon stringers during formation of a

1996-01-17

1997-08-12

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438704, H01L 2170

Patent

active

056565330

ABSTRACT:
A process for producing dual layer polysilicon structures without the formation of residual polysilicon stringers and the resulting structure. Dielectric sidewalls are formed upon a first polysilicon structure to prevent the formation of overhang regions during subsequent oxidation that will harbor residual polysilicon stringers formed by the deposition of a second polysilicon structure on top of the first polysilicon structure.

REFERENCES:
patent: 4749443 (1988-06-01), Mitchell et al.
J. Jasper, "Sloped etching of highly phosphorous doped polysilicon developed with response surface methodolog," SPIE vol. 1803 (1992) 1 page.

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