Method of preventing hillock formation in polysilicon layer by o

Details Method of preventing hillock formation in polysilicon layer by o Method of preventing hillock formation in polysilicon layer by o

1986-01-21

1988-04-26

Upendra, Roy

Fishing, trapping, and vermin destroying

357 91, 148DIG24, 148DIG61, 148DIG83, H01L 21265, H01L 2904

Patent

active

047404817

ABSTRACT:
Hillock formation as a result of heating uncapped polycrystalline silicon layers can be avoided by first implanting the uncapped poly layers with silicon, oxygen, or nitrogen prior to heating. Equivalent mono-atomic oxygen or nitrogen doses in the range of about 10.sup.15 to about 5.times.10.sup.16 ions/cm.sup.2 at energies in the range 10-50 keV are useful with good results being obtained with equivalent oxygen doses of 2.times.10.sup.15 ions/cm.sup.2 at 30 keV. When polysilicon layers with this oxygen implant are heated to about 1150 degrees C., a temperature which would ordinarily produce pronounced hillock formation in un-capped, un-treated poly layers, it is found that hillock formation is suppressed. The implanted oxygen concentrations are far below what is required to produce a separate oxide layer or phase. Some effect on poly layer sheet resistance is observed for implanted oxygen but the implanted layers have sheet resistances within a factor of two of those without the oxygen implants.

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