Method of preventing dislocation multiplication of bulk HgCdTe a

Details Method of preventing dislocation multiplication of bulk HgCdTe a Method of preventing dislocation multiplication of bulk HgCdTe a

1990-08-24

1992-01-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437247, 148DIG64, H01L 21324

Patent

active

050791923

ABSTRACT:
The disclosure relates to a method of forming samples of alloys of group II-VI compositions having minimum dislocations, comprising the steps of providing a sample of a group II-VI compound, providing an enclosed ampoule having the sample at one end portion thereof and a group II element of the compound at an end portion remote from the one end portion, heating the sample to a temperature in the range of 350 to the melting temperature of the compound for about one hour while maintaining the group II element at a temperature more than 200.degree. C. below the sample temperature, heating the group II element to a temperature from about 5.degree. to about 50.degree. C. below the temperature of the sample while maintaining the sample at a temperature in the range of 350.degree. to 650.degree. C. both of about 15 minutes to about 4 hours, and then stoichiometrically annealing the sample at a temperature below 325.degree. C.

REFERENCES:
patent: 4374684 (1983-02-01), Micklethwaite
patent: 4481044 (1984-11-01), Schaake et al.
patent: 4504334 (1985-03-01), Schaake et al.
patent: 4642142 (1987-02-01), Harman
patent: 4648917 (1987-03-01), Kay et al.
patent: 4950621 (1990-08-01), Irvine et al.
patent: 4960728 (1990-10-01), Schaake et al.

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