Method of preventing defects and particles produced after tungst

Details Method of preventing defects and particles produced after tungst Method of preventing defects and particles produced after tungst

1996-07-18

1998-09-08

Goodrow, John

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

438629, 438672, 438685, H01L 21205, H01L 21318

Patent

active

058040919

ABSTRACT:
The present invention is a method of preventing defects and particles produced after tungsten etch back. The method utilizes the Ar plasma process, baking process, and D.I. water flushing with megasonic shacking to reduce a lot of defects and particles on the surface of a wafer. Thus, the present invention can prevent defects and particles produced after tungsten etch back.

REFERENCES:
patent: 4931411 (1990-06-01), Tigalaar et al.
patent: 5612254 (1997-03-01), Mu et al.
patent: 5656097 (1997-08-01), Olesen et al.
Particles on Surfaces Detection, Adhesion and Removal Ed., Mittal 1995 pp. 111-139.

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