Method of preventing cathode of active matrix organic light...

Details Method of preventing cathode of active matrix organic light... Method of preventing cathode of active matrix organic light...

2005-09-27

2005-09-27

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

Reexamination Certificate

active

06949468

ABSTRACT:
A method of preventing the cathode of an active matrix organic light emitting diode from breaking. A substrate having an array of thin film transistors thereon is provided. Each thin film transistor includes a gate electrode, a channel layer, a source terminal and a drain terminal. A passivation layer is formed over the substrate and then the passivation layer is planarized. Thereafter, an opening that exposes the drain terminal is formed in the passivation layer. An anode layer is formed over the passivation layer and the interior of a portion of the opening so that the drain terminal and the anode layer are electrically connected. A light-emitting layer and a cathode layer are sequentially formed over the substrate to form an active matrix organic light emitting device.

REFERENCES:
patent: 4350563 (1982-09-01), Takada et al.
patent: 4620208 (1986-10-01), Fritzsche et al.
patent: 5559399 (1996-09-01), Tanski et al.
patent: 5846884 (1998-12-01), Naeem et al.
patent: 6255705 (2001-07-01), Zhang et al.
patent: 6335290 (2002-01-01), Ishida

Affiliated with

Also associated with

Rating

Method of preventing cathode of active matrix organic light... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of preventing cathode of active matrix organic light..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of preventing cathode of active matrix organic light... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3410086