Method of presuming life time of semiconductor device

Details Method of presuming life time of semiconductor device Method of presuming life time of semiconductor device

1995-09-18

1997-07-22

Tsai, Jey

Fishing, trapping, and vermin destroying

437170, 324719, H01L 2166

Patent

active

056503369

ABSTRACT:
A plurality of different constant currents are implanted into an element of a semiconductor device such as a gate oxide film and a metal wire, a charge-to-breakdown (or a breakdown time) is measured from a result of current implantation, a relationship between a constant current value and the charge-to-breakdown (or a breakdown time) is determined, and a time-sequence change in the current during application of a constant voltage is presumed. Next, of a time-sequence change characteristic of the current during application of the constant voltage, current values during the respective minute periods are approximated to a constant current value. Consumption ratios of the life time due to the respective current values are calculated based on a relationship between the constant current value and the charge-to-breakdown (or a breakdown time). the consumption ratios of the life time are accumulated, and the sum of the respective minute periods which is obtained when the accumulation value becomes 1 is presumed to be the life time. Since the life time during application of the constant voltage is presumed utilizing a result of a constant current test which takes only a short time, it is possible to quantitatively, quickly and accurately presume the reliability life time of a gate oxide film and a metal wire and a TFT, etc.

REFERENCES:
patent: 3939415 (1976-02-01), Terasawa
patent: 4210464 (1980-07-01), Tanaka et al.
patent: 5307385 (1994-04-01), Shimanuki

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