Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2005-07-26
2005-07-26
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S007000, C438S010000, C438S016000, C438S017000, C438S692000, C438S712000
Reexamination Certificate
active
06921719
ABSTRACT:
A method for preparing a semiconductor wafer for whole wafer backside inspection is disclosed. The frontside of the wafer is covered with a protective frontside substrate and the backside portion of the wafer is thinned using conventional techniques. The whole wafer backside is then polished and a backside substrate, preferably of transparent material is juxtaposed to the backside of the wafer, such as with an adhesive or with a frame. The frontside substrate is then removed, exposing electronic devices for device inspection. The backside of the wafer is maintained open or available to backside inspection such as emission microscopy techniques used to detect defects which emit light.
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Halley David G.
Paterson Allan
Goudreau George A.
Lebens Thomas F.
Sinsheimer, Schiebelhut & Daggett
Strasbaugh, A California Corporation
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