Method of preparing ultrafine particle dispersion material

Details Method of preparing ultrafine particle dispersion material Method of preparing ultrafine particle dispersion material

1992-09-30

1994-01-18

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Chemical vapor deposition

427196, 427201, 427250, 4272552, 4272553, 4272557, 427561, 427563, 427595, B05D 134

Patent

active

052798682

ABSTRACT:
In the manufacture of ultrafine particles of semiconductor compound, pulse laser with high output is irradiated on an evaporation source having the same or similar composition as the above semiconductor compound to evaporate the source in a moment and the ultrafine particles of the semiconductor compound are produced utilizing the nuclear growth in inert gas. A process wherein a material for ultrafine particles is heated/evaporated by laser in inert gas and the resulting vapor is rapidly cooled by a collision with the inert gas whereby the resulting ultrafine particles of said material is sticked on a base plate and another process wherein a material for matrix is heated/evaporated by laser whereby the matrix is formed on the base plate are carried out alternately so that the ultrafine particles are homogeneously dispersed in the matrix to prepare the material wherein the ultrafine particles are dispersed.

REFERENCES:
"Kagaku Sosetsu (=Chemical Reviews)" No. 48, 1985 Kotai Butsuri, vol. 24, p. 925 (1989).

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