Method of preparing thin film resistors

Details Method of preparing thin film resistors Method of preparing thin film resistors

1994-08-18

1996-04-02

Achutamurthy, Ponnathapura

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427259, 427537, 437 47, 437 60, 437918, 216 67, 216 48, 216 79, H05H 100

Patent

active

055038786

ABSTRACT:
A method of preparing a patterned thin film resistor that is appropriately used in combination with semiconductor devices. The method comprises a thin film forming step comprising forming a thin film of a compound comprising at least one metal on an oxide film such as a silicon oxide film; a masking step comprising covering a desired area of the thin film by an organic material; a patterning step comprising converting to plasma a gas mixture comprising a fluorine compound gas and oxygen, and removing an area of the thin film, that is not covered by the organic material by exposing it to a gas containing activated fluorine by the plasma conversion; and a removing step comprising removing the organic material remaining on the desired area of the thin film.

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patent: 4758321 (1988-07-01), Vugts
Foreign Patent Document: Japanese 63-216960 dated Sep. 1988, English Abstract, Not Translated.
IBM Technical Disclosure Bulletin, vol. 24, No. 6, Nov. 1981, pp. 2962-2963.

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