Method of preparing silicon carbide wafers for epitaxial growth

Details Method of preparing silicon carbide wafers for epitaxial growth Method of preparing silicon carbide wafers for epitaxial growth

1996-11-20

1999-04-20

Nuzzolillo, Maria

Etching a substrate: processes

Mechanically shaping, deforming, or abrading of substrate

Nongaseous phase etching

216 88, 216 89, 216 90, 216 91, 216 99, 216 57, 117 97, 117951, C23F 100

Patent

active

058955836

ABSTRACT:
Silicon carbide wafers are prepared for semiconductor epitaxial growth by first lapping a silicon carbide wafer derived from a boule, by placing the wafer in a recess of a metal backed template and moving the wafer over and against a rotating plate. Two different diamond slurry mixtures of progressively smaller diamond grit sizes are sequentially used, along with a lubricant, for a predetermined period of time. The lapping operation is followed by a polishing operation which sequentially utilizes two different diamond slurry mixtures of progressively smaller diamond grit sizes, along with three different apertured pads sequentially applied to a rotatable plate, with the pads being of progressively softer composition. In a preferred embodiment the wafers are cleaned and the templates are changed after each new diamond slurry mixture used.

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patent: 5483084 (1996-01-01), Hirabayashi
patent: 5718618 (1998-02-01), Guckel et al.

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